| PART |
Description |
Maker |
| M24L216128SA-70BEG M24L216128SA-70BIG M24L216128SA |
128K X 16 PSEUDO STATIC RAM, 55 ns, PDSO44 0.400 INCH, LEAD FREE, TSOP2-44
2-Mbit (128K x 16) Pseudo Static RAM
|
Sharp Electronics, Corp.
Elite Semiconductor Memory Technology Inc.
|
| CYU01M16SFEU-70BVXI |
16-Mbit (1M x 16) Pseudo Static RAM 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| LH5P864 LH5P864N-80 |
CMOS 512K(64K x 8) pseudo-static RAM
CMOS 512K (64K x 8) Pseudo-Static RAM
|
SHARP[Sharp Electrionic Components]
|
| CYK128K16MCCBU-55BVI CYK128K16MCBU-55BVXI CYK128K1 |
2-Mbit (128K x 16) Pseudo Static RAM
128K X 16 PSEUDO STATIC RAM, 70 ns, PBGA48
|
CYPRESS SEMICONDUCTOR CORP
|
| M24L416256SA-60BEG M24L416256SA-60BIG M24L416256SA |
4-Mbit (256K x 16) Pseudo Static RAM
256K X 16 PSEUDO STATIC RAM, 60 ns, PDSO44
|
Elite Semiconductor Mem...
Elite Semiconductor Memory Technology Inc.
|
| HY64LD16322M-DF85I HY64LD16322M-DF85E |
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC
x16|2.5(VDD)2.5(VDDQ)V|85|Pseudo SRAM - 32M x16 | 2.5（VDD）在2.5（提供VDDQ）V | 85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| W963A6BBN80E |
512K WORD X 16 BIT LOW POWER PSEUDO SRAM 512K X 16 PSEUDO STATIC RAM, 75 ns, PBGA48
|
Winbond Electronics, Corp.
|
| HM658128ALFP-8L HM658128ALT-8L |
128K X 8 PSEUDO STATIC RAM, 80 ns, PDSO32 PLASTIC, SOP-32
128K X 8 PSEUDO STATIC RAM, 80 ns, PDSO32 8 X 20 MM, PLASTIC, TSOP-32
|
Hitachi,Ltd.
|
| AM49PDL640AGA70NT AM49PDL640AGA70NS AM49PDL640AG85 |
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM 64兆位个M x 16位）.0伏的CMOS只，同时作业闪存16兆位米16位），伪静态存储器
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM 64兆位个M x 16位）.0伏的CMOS只，同时作业闪存6兆位米16位），伪静态存储器
|
Spansion Inc.
Spansion, Inc.
EPCOS AG
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS66WV1M16DALL IS66WV1M16DBLL |
16Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| AM49PDL129AH70IT AM49PDL129AH61IT AM49PDL129AH61IS |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) CMOS Pseudo Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion, Inc.
|
